1 publication date: september 2003 sjc00292aed transistors 2SB1693 silicon pnp epitaxial planar type for general amplification features ? large collector current i c ? mini type package, allowing downsizing of the equipment and auto- matic insertion through the tape packing and the magazine packing absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 40 v collector-emitter voltage (base open) v ceo ? 20 v emitter-base voltage (collector open) v ebo ? 15 v collector current i c ? 0.5 a peak collector current i cp ? 1a collector power dissipation p c 200 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c unit: mm parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 40 v collector-emitter voltage (base open) v ceo i c = ? 2 ma, i b = 0 ? 20 v emitter-base voltage (collector open) v ebo i e = ? 10 a, i c = 0 ? 15 v forward current transfer ratio * h fe1 v ce = ? 2 v, i c = ? 100 ma 160 560 ? h fe2 v ce = ? 2 v, i c = ? 500 ma 100 collector-emitter saturation voltage * v ce(sat) i c = ? 100 ma, i b = ? 10 ma ? 60 ? 300 mv i c = ? 0.5 a, i b = ? 25 ma ? 210 ? 500 transition frequency f t v cb = ? 5 v, i e = 50 ma, f = 200 mhz 170 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 16 pf (common base, input open circuited) marking symbol: 3d electrical characteristics t a = 25 c 3 c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : pulse measurement 0.40 +0.10 ?0.05 (0.65) 1.50 +0.25 ?0.05 2.8 +0.2 ?0.3 2 1 3 (0.95) (0.95) 1.9 0.1 2.90 +0.20 ?0.05 0.16 +0.10 ?0.06 0.4 0.2 5? 10? 0 to 0.1 1.1 +0.2 ?0.1 1.1 +0.3 ?0.1 1: base 2: emitter 3: collector eiaj: sc-59 mini3-g1 package
2SB1693 2 sjc00292aed i c ? v be v ce(sat) ? i c h fe ? i c p c ? t a i c ? v ce i c ? i b c ob ? v cb 0 160 40 120 80 0 240 200 160 120 80 40 collector power dissipation p c ( mw ) ambient temperature t a ( c ) 0 0 ? 12 ? 2 ? 10 ? 4 ? 8 ? 6 ? 0.4 collector-emitter voltage v ce (v) collector current i c (a) ? 0.3 ? 0.2 ? 0.1 ? 0.3 ma ? 0.2 ma ? 0.1 ma ? 0.4 ma ? 0.5 ma ? 0.7 ma ? 0.6 ma ? 0.8 ma ? 0.9 ma i b = ? 1.0 ma t a = 25 c 0 ? 1.0 ? 0.4 ? 0.6 ? 0.2 ? 0.8 0 ? 0.30 ? 0.25 ? 0.20 ? 0.15 ? 0.10 ? 0.05 v ce = ? 2 v base current i b (ma) collector current i c ( a ) 0 ? 1.2 ? 0.4 ? 0.6 ? 0.2 ? 0.8 ? 1.0 0 ? 0.12 ? 0.10 ? 0.08 ? 0.06 ? 0.04 ? 0.02 v ce = ? 2 v t a = 75 c ? 25 c 25 c base-emitter voltage v be ( v ) collector current i c ( a ) ? 10 ? 3 ? 1 ? 10 ? 1 ? 10 ? 100 i c / i b = 10 ? 10 ? 2 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) ? 1 ? 100 ? 10 0 400 300 200 100 forward current transfer ratio h fe collector current i c (ma) v ce = ? 2 v t a = 75 c 25 c ? 25 c 0 ? 10 ? 20 ? 30 ? 40 1 100 10 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v )
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